EVOLUTION OF THE FIELD OF DISTRIBUTED DEFECTS IN A CRYSTAL DURING CONTACT INTERACTION WITH A SYSTEM OF RIGID STAMPS

The article discusses the mathematical modeling for evolution of stress-strain state and fields defects in crystals during their contact interaction with a system rigid punches. From macroscopic point view, redistribution is characterized by inelastic (viscoplastic) deformation, therefore processes under study can be classified as elastic-viscoplastic. Elastic deformations are assumed to finite. To take into account deformations, it proposed use differential-geometric approach, which distributed completely measures incompatible quantified material connection invariants. This generated non-Euclidean metric, which, turn, given field symmetric linear mappings that define (inconsistent) crystal. Since development local depends both on thecontact at boundary distribution bulk crystal, simulation problem turns out coupled. It change defect density determined first-order Alexander Haasen Sumino evolutionary law, takes deviatoric part stress field. An iterative algorithm has been developed find coupled density. numerical analysis model was provided silicon crystal form parallelepiped, one face rigidly fixed, stamps acts opposite face. three-constant Mooney Rivlin potential used elastic response.